vishay BAT54-HT3 to bat54s-ht3 document number 85690 rev. 5, 11-sep-03 vishay semiconductors www.vishay.com 1 1 2 3 BAT54-HT3 1 2 3 bat54c-ht3 top view 1 2 3 bat54a-ht3 1 2 3 bat54s-ht3 top view 17004 pin 1 top view schottky diodes features ? these diodes feature very low turn-on voltage and fast switching. these devices are protected by a pn junction guard ring against excessive voltage, such as electrostatic discharges. space saving llp package mechanical data case: llp75-3b plastic package molding compound flammability rating: ul 94 v-0 terminals: high temperature soldering guaranteed: 260 c/10 sec. at terminals weight: 5 mg parts table part ordering code marking remarks BAT54-HT3 BAT54-HT3-gs08 l4 tape and reel bat54a-ht3 bat54a-ht3-gs08 l5 tape and reel bat54c-ht3 bat54c-ht3-gs08 l6 tape and reel bat54s-ht3 bat54s-ht3-gs08 l7 tape and reel absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit repetitive peak reverse voltage=working peak reverse voltage v rrm 30 v forward continuous current i f 200 ma repetitive peak forward current i frm 300 ma surge forward current current i fsm 600 ma power dissipation p tot 230 mw parameter test condition symbol value unit thermal resistance junction to ambiant air r ja 430 c/w junction temperature t j 125 c storage temperature range t s - 65 to + 150 c
www.vishay.com 2 document number 85690 rev. 5, 11-sep-03 vishay BAT54-HT3 to bat54s-ht3 vishay semiconductors electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics (t amb = 25 c unless otherwise specified) parameter test condition symbol min ty p. max unit reverse breakdown voltage 100 a pulses v (br) 30 v leakage current pulse test t p < 300 s, < 2 % at v r = 25 v 2 a forward voltage i f = 0.1 ma, t p < 300 s, < 2 % v f 240 mv i f = 1 ma, t p < 300 s, < 2 % v f 320 mv i f = 10 ma, t p < 300 s, < 2 % v f 400 mv i f = 30 ma, t p < 300 s, < 2 % v f 500 mv i f = 100 ma, t p < 300 s, < 2 % v f 1000 mv capacitance v r = 0 v, f = 1 mhz c tot 12 pf reverse recovery time i f = 10 ma , i r = 10 ma to i r = 1 ma, r l = 100 ? t rr 5 ns figure 1. typical forward voltage forward current at various temperatures figure 2. typical variation of reverse current at various temperatures 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1000 100 10 1 0.1 t j =-40 c t j =25 c t j =125 c i f in ma v f in v gBAT54-HT3_01 0.01 0 5 10 15 20 25 30 1000 100 10 1 0.1 t j =25 c t j =50 c t j =75 c t j = 125 c t j = 100 c i r in a v r in v g bat45-ht3 02 figure 3. typical capacitance c vs. reverse applied voltage v r 0 0 4 8 1216202428 10 12 14 8 6 4 2 c in pf v r in v gBAT54-HT3_03
vishay BAT54-HT3 to bat54s-ht3 document number 85690 rev. 5, 11-sep-03 vishay semiconductors www.vishay.com 3 package dimensions in mm 18057 iso method e
www.vishay.com 4 document number 85690 rev. 5, 11-sep-03 vishay BAT54-HT3 to bat54s-ht3 vishay semiconductors ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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